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Typical Characteristics T J = 25°C unless otherwise noted
10
I D = -4.9A
2000
8
6
4
V DD = -10V
V DD = -15V
V DD = -20V
1000
C iss
C oss
2
100
f = 1MHz
C rss
0
0
4
8
12
16
20
50
0.1
V GS = 0V
1
10
30
10
Q g , GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
5
30
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
10
4
V DS = 0V
10
100us
10
3
10
10
2
1
T J =
150 o C
1
SINGLE PULSE
1ms
10ms
10
10
10
10
T A = 25 C
0
-1
-2
-3
0
5
10
15
20
T J = 25 o C
25
30
35
0.1
0.01
0.1
T J = MAX RATED
R θ JA = 156 o C/W
o
THIS AREA IS
LIMITED BY r DS(on)
1
10
100ms
1s
10s
DC
100
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Gate Leakage Current vs Gate to
Source Voltage
1000
V GS = -10V
-V DS , DRAIN to SOURCE VOLTAGE (V)
Figure 10. Forward Bias Safe
Operating Area
SINGLE PULSE
R θ JA = 156 o C/W
T A = 25 o C
100
10
1
10
10
10
10
10
10
10
10
0.5
-4
-3
-2
-1
0
1
2
3
t, PULSE WIDTH (s)
Figure 11. Single Pulse Maximum Power Di ssipation
FDC610PZ Rev . B
4
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